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| SI3590DV New Product Vishay Siliconix N- and P-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) N-Channel 30 FEATURES rDS(on) (W) ID (A) 3 2 -2 -1.2 0.077 @ VGS = 4.5 V 0.120 @ VGS = 2.5 V 0.170 @ VGS = -4.5 V D TrenchFETr Power MOSFET D Ultra Low rDS(on) N- and P-Channel for High Efficiency D Optimized for High-Side/Low-Side D Minimized Conduction Losses P-Channel -30 0.300 @ VGS = -2.5 V APPLICATIONS D Portable Devices Including PDAs, Cellular Phones and Pagers D1 S2 TSOP-6 Top View G1 1 6 D1 G2 3 mm S2 2 5 S1 G1 G2 3 4 D2 2.85 mm S1 N-Channel MOSFET D2 P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) N-Channel Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a _ Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa TA = 25_C TA = 70_C PD TJ, Tstg TA = 25_C TA = 70_C ID IDM IS 1.05 1.15 0.70 P-Channel 10 secs Steady State -30 "12 V -1.7 -1.3 -8 A -0.75 0.83 0.53 W _C Symbol VDS VGS 10 secs Steady State 30 "12 Unit 3 2.3 8 2.5 2.0 -2 -1.6 0.75 0.83 0.53 -55 to 150 -1.05 1.15 0.70 Operating Junction and Storage Temperature Range THERMAL RESISTANCE RATINGS N-Channel Parameter t v 10 sec Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on 1" x 1" FR4 Board. Document Number: 72032 S-21979--Rev. A, 04-Nov-02 www.vishay.com Steady State Steady State RthJA RthJF P-Channel Typ 93 130 75 Symbol Typ 93 130 75 Max 110 150 90 Max 110 150 90 Unit _C/W C/W 1 SI3590DV Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 mA VDS = VGS, ID = -250 mA VDS = 0 V, VGS = "12 V " VDS = 24 V, VGS = 0 V VDS = -24 V, VGS = 0 V Zero Gate Voltage Drain Current IDSS VDS = 24 V, VGS = 0 V, TJ = 55_C VDS = -24 V, VGS = 0 V, TJ = 55_C On-State Drain Currenta VDS w 5 V, VGS = 4.5 V ID(on) VDS p -5 V, VGS = -4.5 V VGS = 4.5 V, ID = 3 A Drain-Source On-State Resistancea VGS = -4.5 V, ID = -2 A rDS(on) VGS = 2.5 V, ID = 2 A VGS = -2.5 V, ID = -1.2 A Forward Transconductancea VDS = 5 V, ID = 3 A gfs VDS = -5 V, ID = -2 A IS = 1.05 A, VGS = 0 V VSD IS = -1.05 A, VGS = 0 V N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch 5 -5 0.062 0.135 0.095 0.235 10 5 0.80 -0.83 1.10 -1.10 V S 0.077 0.170 0.120 0.300 W A 0.6 -0.6 1.5 V -1.5 "100 "100 1 -1 5 -5 mA m nA Symbol Test Condition Min Typ Max Unit Gate-Body Leakage IGSS Diode Forward Voltagea Dynamicb N-Ch Total Gate Charge Qg N-Channel VDS = 15 V, VGS = 4.5 V, ID = 2 A Gate-Source Charge Qgs P-Channel VDS = -15 V, VGS = -4.5 V, ID = -2 A P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch Turn-On Delay Time td(on) N-Channel VDD = 15 V, RL = 15 W ID ^ 1 A, VGEN = 10 V, RG = 6 W P-Channel VDD = -15 V, RL = 15 W ID ^ -1 A, VGEN = -10 V, RG = 6 W P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch Fall Time Source-Drain Reverse Recovery Time tf IF = 1.05 A, di/dt = 100 A/ms trr IF = -1.05 A, di/dt = 100 A/ms P-Ch N-Ch P-Ch 3 3.8 0.6 nC 0.6 1.0 1.5 5 5 12 15 13 20 7 20 15 18 8 8 23 23 23 30 12 30 25 30 ns 4.5 6 Gate-Drain Charge Qgd Rise Time tr Turn-Off Delay Time td(off) Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. www.vishay.com 2 Document Number: 72032 S-21979--Rev. A, 04-Nov-02 SI3590DV New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 8 7 I D - Drain Current (A) 6 5 4 3 2 1 1.5 V 0 0 1 2 3 4 5 0 0.0 0.5 1.0 1.5 2.0 2V VGS = 5 thru 2.5 V I D - Drain Current (A) 8 7 6 5 4 3 TC = 125_C 2 1 25_C -55 _C Vishay Siliconix N-CHANNEL Transfer Characteristics 2.5 3.0 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) On-Resistance vs. Drain Current 0.5 450 Capacitance r DS(on) - On-Resistance ( W ) 0.4 C - Capacitance (pF) 360 Ciss 270 0.3 0.2 VGS = 2.5 V 0.1 VGS = 4.5 V 0.0 0 2 4 6 8 10 180 90 Crss 0 6 Coss 0 12 18 24 30 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) Gate Charge 6 V GS - Gate-to-Source Voltage (V) VDS = 15 V ID = 2 A 1.8 On-Resistance vs. Junction Temperature VGS = 4.5 V ID = 3 A 4 r DS(on) - On-Resistance (W) (Normalized) 2 3 4 5 5 1.6 1.4 3 1.2 2 1.0 1 0.8 0 0 1 0.6 -50 -25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (_C) Document Number: 72032 S-21979--Rev. A, 04-Nov-02 www.vishay.com 3 SI3590DV Vishay Siliconix New Product N-CHANNEL On-Resistance vs. Gate-to-Source Voltage 0.25 TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain Diode Forward Voltage 10 r DS(on)- On-Resistance ( W ) 0.20 ID = 3 A 0.15 I S - Source Current (A) TJ = 150_C 1 0.10 TJ = 25_C 0.05 0.1 0.00 0.3 0.6 0.9 1.2 1.5 0.00 0 1 2 3 4 5 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Threshold Voltage 0.4 ID = 250 mA 0.2 V GS(th) Variance (V) 6 8 Single Pulse Power, Junction-to-Ambient -0.0 Power (W) 4 -0.2 2 -0.4 -0.6 -50 0 -25 0 25 50 75 100 125 150 0.01 0.1 1 Time (sec) 10 30 TJ - Temperature (_C) Safe Operating Area, Junction-to-Case 100 IDM Limited 10 I D - Drain Current (A) rDS(on) Limited 100 ms 1 ID(on) Limited 0.1 TC = 25_C Single Pulse BVDSS Limited 1 10 1 ms 10 ms 100 ms 10 s, 1 s dc 0.01 0.1 100 VDS - Drain-to-Source Voltage (V) www.vishay.com 4 Document Number: 72032 S-21979--Rev. A, 04-Nov-02 SI3590DV New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance Vishay Siliconix N-CHANNEL 0.2 0.1 0.1 0.05 0.02 Notes: PDM t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 87_C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 10- 4 10- 3 10- 2 10- 1 1 10 100 600 Square Wave Pulse Duration (sec) 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 Normalized Thermal Transient Impedance, Junction-to-Foot 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10- 4 10- 3 10- 2 10- 1 Square Wave Pulse Duration (sec) 1 10 Document Number: 72032 S-21979--Rev. A, 04-Nov-02 www.vishay.com 5 SI3590DV Vishay Siliconix New Product P-CHANNEL Transfer Characteristics 8 VGS = 5 thru 3.5 V 7 3V I D - Drain Current (A) I D - Drain Current (A) 6 5 4 2.5 V 3 2 1 0 0 1 2 3 4 5 2V 1.5 V 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 6 5 4 3 2 1 125_C 7 TC = -55_C 25_C TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 8 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) On-Resistance vs. Drain Current 0.75 500 Capacitance r DS(on) - On-Resistance ( W ) 0.60 C - Capacitance (pF) 400 Ciss 300 0.45 VGS = 2.5 V 0.30 VGS = 4.5 V 0.15 200 100 Crss Coss 0.00 0 1 2 3 4 5 6 7 8 0 0 6 12 18 24 30 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) Gate Charge 6 V GS - Gate-to-Source Voltage (V) VDS = 15 V ID = 2 A 1.8 On-Resistance vs. Junction Temperature VGS = 4.5 V ID = 2 A 4 r DS(on) - On-Resistance (W) (Normalized) 2 3 4 5 5 1.6 1.4 3 1.2 2 1.0 1 0.8 0 0 1 0.6 -50 -25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (_C) www.vishay.com 6 Document Number: 72032 S-21979--Rev. A, 04-Nov-02 SI3590DV New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain Diode Forward Voltage 10 0.5 Vishay Siliconix P-CHANNEL On-Resistance vs. Gate-to-Source Voltage r DS(on)- On-Resistance ( W ) 0.4 I S - Source Current (A) TJ = 150_C 1 0.3 ID = 2 A 0.2 TJ = 25_C 0.1 0.1 0.00 0.3 0.6 0.9 1.2 1.5 0.0 0 1 2 3 4 5 6 7 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Threshold Voltage 0.4 ID = 250 mA 6 V GS(th) Variance (V) 0.2 Power (W) 8 Single Pulse Power, Junction-to-Ambient 0.3 0.1 4 0.0 2 -0.1 -0.2 -50 0 -25 0 25 50 75 100 125 150 0.01 0.1 Time (sec) 1 10 30 TJ - Temperature (_C) Safe Operating Area, Junction-to-Case 100 IDM Limited 10 I D - Drain Current (A) rDS(on) Limited 100 ms 1 ID(on) Limited 0.1 TC = 25_C Single Pulse BVDSS Limited 1 10 1 ms 10 ms 100 ms 10 s, 1 s dc 0.01 0.1 100 VDS - Drain-to-Source Voltage (V) Document Number: 72032 S-21979--Rev. A, 04-Nov-02 www.vishay.com 7 SI3590DV Vishay Siliconix New Product P-CHANNEL TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.1 0.05 0.02 Notes: PDM t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 87_C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 10- 4 10- 3 10- 2 10- 1 1 10 100 600 Square Wave Pulse Duration (sec) 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 Normalized Thermal Transient Impedance, Junction-to-Foot 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10- 4 10- 3 10- 2 10- 1 Square Wave Pulse Duration (sec) 1 10 www.vishay.com 8 Document Number: 72032 S-21979--Rev. A, 04-Nov-02 |
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